Gunn Oscillator

Introduction

The gunn oscillator is an active microwave device widely used in microwave devices. The bulk effect oscillator can be used as a local oscillator, a pump source for a parametric amplifier, and a microwave signal source in radar, satellite communication ground station, microwave remote sensing and test device.

Structure

The bulk effect diode is appropriately placed in a high-Q resonant cavity to form a resonant circuit to generate microwave oscillations. For different types of body effect transistors, the corresponding resonator should be equipped to achieve a good match. The body effect transistors of the resonator are all operating in the flight time mode or domain mode, and the oscillation frequency mainly depends on the active zone length, impurity concentration and resonator design of the body effect transistor chip.

Working principle

The gunn oscillator is mainly composed of a Geninite effect diode and a resonator. The Geng effect can be expressed as: when the upper ohmic contact electrode is made at both ends of the n-type arsenide home single crystal sample, when the applied electric field is greater than the critical threshold of several kilovolts per centimeter, a very high frequency current will be generated, and its oscillation frequency is inversely proportional to the length of the sample, greater than or equal to the reciprocal of the carrier transit time between the electrodes.

Operating characteristics

Make the size of the cavity certain, change the working voltage of the body effect transitor, then its working current, microwave output power and frequency will change, under the threshold voltage, the current of the body effect transistor increases almost linearly with the voltage, and when the voltage exceeds the threshold, due to the generation and rapid growth of the dipole domain, the current decreases, continues to increase the voltage, and the current changes gently. This is true both from domain formation to the anode crossing.

Application

The gunn oscillator adopts domestic or imported GaAs Gunn diode and waveguide resonant cavity, which has the characteristics of good low noise performance, high reliability and large output power, and is widely used in radar, communication, millimeter wave therapy instrument, speed measurement radar and other equipment as signal source, local oscillator source and emission source.

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